Volume 340, Issue 1 | MRS Online Proceedings Library

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Volume 340, Issue 1

December 1994

Symposium R — New Materials for Advanced Solid State Lasers

89 articles in this issue

Materials Issues in Molecular Beam Epitaxy
J. Y. Tsao
OriginalPaper 15 March 1994 Pages: 3 - 12
Application of Desorption Mass Spectrometry to Molecular Beam Epitaxy
Keith R. Evans
OriginalPaper 15 March 1994 Pages: 13 - 22
Characterization and Control of Surface Morphology and Defect Density for MBE GaAs Surfaces in the Production MBE Environment
George A. Patterson
James S. C. Chang
OriginalPaper 15 March 1994 Pages: 23 - 28
Growth Temperature Uniformity of MBE-Grown GaAs Determined by Scanning Room Temperature Photoluminescence
K. Stair
T. Bird
C. Choi-Feng
OriginalPaper 15 March 1994 Pages: 29 - 34
Non-Contact Temperature Measurement with Infrared Interferometry
Steven C. H. Hung
Haike K. Dong
Charles W. Tu
OriginalPaper 15 March 1994 Pages: 35 - 40
A Monte Carlo Model of GaAs [111]B Epitaxy
Donald L. Dorsey
R. Venkatasubramanian
T. W. Haas
OriginalPaper 15 March 1994 Pages: 41 - 46
Kinetic Monte Carlo Simulations of Ge Segregation During Epitaxial Growth of Si-Si_xGe_l-x Heterostructures
J. Deppe
J. V. Lill
K. D. Hobart
OriginalPaper 15 March 1994 Pages: 47 - 52
Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP
Z. C. Feng
S. J. Chua
N. N. Lim
OriginalPaper 15 March 1994 Pages: 53 - 58
Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates
F. Peiro
A. Cornet
A. Georgakilas
OriginalPaper 15 March 1994 Pages: 59 - 64
MBE Regrowth Over a Selectively Undercut GaAs Masking Layer
C. C. Hansing
H. Deng
B. G. Streetman
OriginalPaper 15 March 1994 Pages: 65 - 70
Electronic and Photonic Device Applications of In_0.5Ga_0.5P and In_0.5Al_0.5P Grown by Gas Source Molecular Beam Epitaxy
Jenn-Ming Kuo
OriginalPaper 15 March 1994 Pages: 71 - 82
GaAs/AlGaAs Multiquantum Well Infrared Detector Array with 6.0 μm Response Width
Jin-Min Li
Hai-Qun Zheng
Mei-Ying Kong
OriginalPaper 15 March 1994 Pages: 83 - 88
In-Situ Surface Photo-Absorption Study of Movpe Surface
Naoki Kobayashi
OriginalPaper 15 March 1994 Pages: 91 - 103
Infrared Study of Trimethylgallium Adsorption on GaAs(100)
Paul E. Gee
Haihua Qi
Robert F. Hicks
OriginalPaper 15 March 1994 Pages: 105 - 110
A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth
Bing-Lin Gu
Jing-Zhi Yu
Yoshiyuki Kawazoe
OriginalPaper 15 March 1994 Pages: 111 - 116
The Effect of Phosphine Pressure on the Band Gap of Ga_0.5In_0.5P
Sarah R. Kurtz
D. J. Arent
J. M. Olson
OriginalPaper 15 March 1994 Pages: 117 - 122
Effect of Substrate Misonrentation on Ordering in Ga_0.5In_0.5P
L. C. Su
I. H. Ho
C. C. Williams
OriginalPaper 15 March 1994 Pages: 123 - 128
Study of GaInP/GaAs/GaInP Double Heterostructures Grown by MOCVD with Photoreflectance and Photoluminescence
H. Kuan
S. C. Shei
Y. K. Su
OriginalPaper 15 March 1994 Pages: 129 - 134
Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design
A. I. Gurary
G. S. Tompa
P. Zawadzki
OriginalPaper 15 March 1994 Pages: 135 - 140
New Technology and Developments in Compound Semiconductor Vertical RDR-MOCVD Growth Systems
M. McKee
G. S. Tompa
K. Moy
OriginalPaper 15 March 1994 Pages: 141 - 146
GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes
C. M. Reaves
J. C. Yen
S. P. DenBaars
OriginalPaper 15 March 1994 Pages: 147 - 152
Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient
Peer Tidemand-Petersson
Ole Albrektsen
Joseph Salzman
OriginalPaper 15 March 1994 Pages: 153 - 158
Novel Group V Sources for Use in Mombe
C. R. Abernathy
D. A. Bohling
P. W. Wisk
OriginalPaper 15 March 1994 Pages: 161 - 166
Chemical Beam Epitaxial Growth of GaP and InP Using Alternative, Safer Precursors
L. P. Sadwick
C. W. Kim
A. C. Jones
OriginalPaper 15 March 1994 Pages: 167 - 172
Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic
H. K. Dong
N. Y. Li
W. C. Mitchel
OriginalPaper 15 March 1994 Pages: 173 - 179
Arsenic Incorporation in InP Epilayers and Arsenide/InP Heterostructures Grown by Chemical Beam Epitaxy
V. Rossignol
A. H. Bensaoula
G. Neu
OriginalPaper 15 March 1994 Pages: 181 - 186
Growth and Doping of AlAs by Mombe
C. R. Abernathy
S. J. Pearton
F. Ren
OriginalPaper 15 March 1994 Pages: 187 - 192
Reflection High-Energy Electron Diffraction Study of Arsenic Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs
H. K. Dong
S. C. H. Hung
C. W. Tu
OriginalPaper 15 March 1994 Pages: 193 - 198
Sulfide Passivated GaAs/AlGaAs Microdisk Lasers
W. S. Hobson
U. Mohideen
M. Lamont Schnoes
OriginalPaper 15 March 1994 Pages: 201 - 206
A Second-Harmonic Generation Study of GaAs-Oxide Removal Using a Hydrogen Plasma
Takahiro Kimura
Chikashi Yamada
OriginalPaper 15 March 1994 Pages: 207 - 212
AlGaAs Surface Reconstruction after Cl₂ Chemical Etch and Ultra High Vacuum Anneal
M. Hong
J. P. Mannaerts
R. S. Freund
OriginalPaper 15 March 1994 Pages: 213 - 219
Dry ETCH Induced Defects and H Passivation of GaAs Surfaces Produced by CH₄/H₂/Ar Plasmas
G. F. McLane
W. R. Buchwald
OriginalPaper 15 March 1994 Pages: 221 - 225
ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique
Louise H. Grober
M. Hong
R. S. Freund
OriginalPaper 15 March 1994 Pages: 227 - 232
AFM and STM Studies of Large Scale Unstable Growth Formed During GaAs (001) Homoepitaxy
C. Orme
M. D. Johnson
B. G. Orr
OriginalPaper 15 March 1994 Pages: 233 - 239
Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy
A. Y. Lew
E. T. Yu
R. H. Miles
OriginalPaper 15 March 1994 Pages: 241 - 246
The Optimization of Interfaces in InAsSb/InGaAs Strained-Layer Superlattices grown by Metal-Organic Chemical Vapor Deposition
R. M. Biefeld
K. C. Baucom
S. R. Kurtz
OriginalPaper 15 March 1994 Pages: 247 - 252
High-Quality InAs/A1Sb Superlattices with AlAs and InSb Interfaces
Brian R. Bennett
B. V. Shanabrook
R. J. Wagner
OriginalPaper 15 March 1994 Pages: 253 - 258
Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer
Bing Yang
J. C. Chen
F. S. Choa
OriginalPaper 15 March 1994 Pages: 259 - 263
Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP
V. A. Gorbyley
A. A. Chelniy
A. A. Balmashnov
OriginalPaper 15 March 1994 Pages: 265 - 270
Doping in III-V Semiconductors
E. F. Schubert
OriginalPaper 15 March 1994 Pages: 273 - 282
The Use of Tetraethyltin as an N Type Dopant Source in GAAs, ALGAAs, and ALAS for Lasers and Bragg Reflectors Grown by MOCVD
C. J. Pinzone
J. G. Neff
R. D. Dupuis
OriginalPaper 15 March 1994 Pages: 283 - 288
Temperature Dependence of Carbon Incorporation in Al_xGa_1-xAs Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
D. V. Forbes
J. J. Coleman
OriginalPaper 15 March 1994 Pages: 289 - 294
Dopant and As₄/Ga Flux Ratio Influence on the Electrical and Structural Properties of LT GaAs
S. P. O’Hagan
M. Missous
OriginalPaper 15 March 1994 Pages: 295 - 300
Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation
V. A. Gorbylev
A. A. Chelniy
A. A. Balmashnov
OriginalPaper 15 March 1994 Pages: 301 - 306
A Study of Traps in Semi-Insulating III-V Epitaxial Films by Zero Bias Transient Current Spectroscopy
W. S. Lau
C. H. Goo
C. T. Tan
OriginalPaper 15 March 1994 Pages: 307 - 312
A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates
G. J. Moran
I. Morrison
C. C. Matthai
OriginalPaper 15 March 1994 Pages: 315 - 320
Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells
P. Bigenwald
O. Laire
R. L. Aulombard
OriginalPaper 15 March 1994 Pages: 321 - 326
The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors
M. Meshkinpour
M. S. Goorsky
D. H. Rich
OriginalPaper 15 March 1994 Pages: 327 - 332
Optical Studies of The Uniformity of Thermally Induced In-Plane Strain in Thin Gallium Arsenide Films
M. Taysing-Lara
H. Shen
M. Dutta
OriginalPaper 15 March 1994 Pages: 333 - 336
The Characteristics of the Lateral Thickness Modulation in Strained Layer Ga_xIn_1-xAs Multiple Quantum Well Structures Grown by MOVPE
X. Zhou
P. Charsley
A. T. R. Briggs
OriginalPaper 15 March 1994 Pages: 337 - 342