Abstract
The GaInP-GaAs single quantum well structures grown by metal-organic chemical vapor deposition (MOCVD) were investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The built-in electric field in the GaAs close to the top surface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps and broadening parameters were also determined. The full width at half maximum (FWHM) of the GaInP PL peak is 11 meV
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Kuan, H., Shei, S.C., Tzou, W.J. et al. Study of GaInP/GaAs/GaInP Double Heterostructures Grown by MOCVD with Photoreflectance and Photoluminescence. MRS Online Proceedings Library 340, 129–134 (1994). https://doi.org/10.1557/PROC-340-129
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DOI: https://doi.org/10.1557/PROC-340-129