Abstract
The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. InAs/AlSb superlattices with both types of interfaces were grown using migration-enhanced epitaxial techniques. The layer quality and control of interfacial composition were confirmed by x-ray diffraction, Raman spectroscopy, and photoluminescence measurements. We demonstrate that high-quality superlattices with both InSb- and AlAs-bonded interfaces can be achieved with appropriate growth temperatures.
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Bennett, B.R., Shanabrook, B.V., Glaser, E.R. et al. High-Quality InAs/A1Sb Superlattices with AlAs and InSb Interfaces. MRS Online Proceedings Library 340, 253–258 (1994). https://doi.org/10.1557/PROC-340-253
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DOI: https://doi.org/10.1557/PROC-340-253