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The Characteristics of the Lateral Thickness Modulation in Strained Layer GaxIn1-xAs Multiple Quantum Well Structures Grown by MOVPE

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Abstract

Similar phenomena associated with the lateral thickness modulation have been observed in two different types of GaxIn1-x strained layer multiple quantum well structures grown on InP by MOVPE. The thickness modulations were always quasi-periodic and developed anisotropically in the [110] direction. It has been found that lattice distortions were caused by such thickness modulations, resulting probably in overall surface elastic relaxation. Once the thickness modulation had started at some stage of the growth, it would continue in the subsequent layer with approximately the same modulation period and an amplified amplitude. This is attributed to the effect of the lattice deformation at the growth surface on the deposition rate of the subsequent layer. The effect of such factors as the magnitude of strain, the growth temperature and the V/III gas ratio on the onset of the thickness modulation is discussed.

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References

  1. E. P. O’Reilly, Semiconductor Science & Technology 4, 121 (1989).

    Article  Google Scholar 

  2. P. J. A. Thijs, J. J. Binsma, L. F. Tiemeijer and T. van Dongen, Electronic Letters 28, 829 (1992).

    Article  CAS  Google Scholar 

  3. B. I. Miller, U. Koren, M. G. Young and M. D. Chen, Appl. Phys. Lett. 58, 1952 (1991).

    Article  CAS  Google Scholar 

  4. A. Ponchet, A. Rocher, J. Y. Emery and L. Goldstein, Inst. Phys. Conf: Ser. No. 134 (IOP Publishing, Bristol, 1993), pp. 485–488.

    Google Scholar 

  5. S. N. G. Chu, R. A. Logan and T. Tanbun-Ek, J. Appl. Phys. 72, 4118 (1992).

    Article  CAS  Google Scholar 

  6. A. G. Cullis, D. J. Robbins, A. J. Pidduck and P. W. Smith, J. Crystal Growth 123, 333 (1992).

    Article  CAS  Google Scholar 

  7. F. Glas, J. Appl. Phys. 62, 3201 (1987).

    Article  CAS  Google Scholar 

  8. A. M. Ceschin and J. Massies, J. Crystal Growth 114, 693 (1991).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, University of Surrey, Guildford, Surrey, GU2 5XH, UK

    X. Zhou & P. Charsley

  2. BNR Europe Ltd, London Road, Harlow, Essex, CM17 9NA, UK

    A. D. Smith & A. T. R. Briggs

Authors
  1. X. Zhou
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  2. P. Charsley
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  3. A. D. Smith
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  4. A. T. R. Briggs
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Zhou, X., Charsley, P., Smith, A.D. et al. The Characteristics of the Lateral Thickness Modulation in Strained Layer GaxIn1-xAs Multiple Quantum Well Structures Grown by MOVPE. MRS Online Proceedings Library 340, 337–342 (1994). https://doi.org/10.1557/PROC-340-337

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  • DOI: https://doi.org/10.1557/PROC-340-337

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