Abstract
In this study, we demonstrate the enhancement of n-In0.53Ga0.47A s Schottky barrier height by using a thin (300-1800 Å) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents. Results of the electrical measurements are summarized in table 1. The barrier height of n- In0.53Ga0.47As was increased from 0.2 eV to 0.66 eV when a 1200-Å-thick p-InP surface layer was employed.
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Yang, B., Chen, J.C. & Choa, F.S. Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer. MRS Online Proceedings Library 340, 259–263 (1994). https://doi.org/10.1557/PROC-340-259
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DOI: https://doi.org/10.1557/PROC-340-259