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Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy

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Abstract

Cross-sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1-x InxSb strained-layer superlattices grown by molecular-beam epitaxy. Atomic-resolution constant-current images of the epitaxial layers reveal monolayer roughness at the superlattice interfaces. An asymmetry in electronic structure between interfaces in which InAs has been grown on Ga1-x InxSb and those in which Ga1-x InxSb has been grown on InAs has also been observed in these images. Close inspection of the images reveals increased growthdirection lattice spacings in the Ga1-x InxSb layers compared to the InAs layers, as well as even larger lattice spacings at the InAs/Ga1-x InxSb interfaces. The latter is consistent with the formation of primarily InSb-like interfaces. Current-voltage spectra obtained while tunneling into the superlattice layers are found to be strongly influenced by extended superlattice electronic states.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, 92093-0407, USA

    A. Y. Lew & E. T. Yu

  2. Hughes Research Laboratories, Malibu, CA, 92065, USA

    D. H. Chow & R. H. Miles

Authors
  1. A. Y. Lew
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  2. E. T. Yu
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  3. D. H. Chow
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  4. R. H. Miles
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Lew, A.Y., Yu, E.T., Chow, D.H. et al. Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy. MRS Online Proceedings Library 340, 241–246 (1994). https://doi.org/10.1557/PROC-340-241

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  • DOI: https://doi.org/10.1557/PROC-340-241

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