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Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient

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Abstract

A new application of selective area metalorganic vapour phase epitaxy is demonstrated: fabrication of distributed feedback (DFB) gratings with sub-micron period and modulated coupling coefficient Kc. A SiO2 mask layer defines the InGaAs(P) grating pattern as well as the lateral variation in growth rate and, hence, thickness of the grating. In this way K can be varied along the laser cavity in a controlled and reproducible manner.

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Authors and Affiliations

  1. Tele Danmark Research, Lyngsø Allé 2, DK-2970, Horsholm, Denmark

    Peer Tidemand-Petersson, Ole Albrektsen, Anders Møller-Larsen & Joseph Salzman

  2. Department of Electrical Engineering and Solid State Institute, Technion, Israel Institute of Technology, Haifa, 3200, Israel

    Joseph Salzman

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  1. Peer Tidemand-Petersson
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  2. Ole Albrektsen
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  3. Anders Møller-Larsen
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  4. Joseph Salzman
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Tidemand-Petersson, P., Albrektsen, O., Møller-Larsen, A. et al. Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient. MRS Online Proceedings Library 340, 153–158 (1994). https://doi.org/10.1557/PROC-340-153

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  • DOI: https://doi.org/10.1557/PROC-340-153

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