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Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

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It is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

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Authors and Affiliations

  1. Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia

    V. A. Gorbyley, A. A. Chelniy & A. A. Chekalin

  2. Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia

    A. Y. Polyakov, N. B. Smirnov, A. V. Gnorkov, B. M. Leiferov, E. V. Popova & V. A. Kusikov

  3. Materials Science Department, University of Florida, Heinz Hall, Gainsville, Florida, FL, 32111, USA

    S. J. Pearon

  4. Russian Friendship University, Miklukho-Maklay str., 6, Moscow, 117198, Russia

    A. A. Balmashnov

Authors
  1. V. A. Gorbyley
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  2. A. A. Chelniy
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  3. A. A. Chekalin
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  4. A. Y. Polyakov
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  5. S. J. Pearon
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  6. N. B. Smirnov
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  7. A. V. Gnorkov
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  8. B. M. Leiferov
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  9. E. V. Popova
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  10. V. A. Kusikov
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  11. A. A. Balmashnov
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Gorbyley, V.A., Chelniy, A.A., Chekalin, A.A. et al. Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP. MRS Online Proceedings Library 340, 265–270 (1994). https://doi.org/10.1557/PROC-340-265

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  • DOI: https://doi.org/10.1557/PROC-340-265

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