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Electronic and Photonic Device Applications of In0.5Ga0.5P and In0.5Al0.5P Grown by Gas Source Molecular Beam Epitaxy

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Abstract

Advances in gas-source molecular beam epitaxial (GSMBE) growth techniques have allowed the successful fabrication of electronic and photonic devices based on In0.5Ga0.5P and In0.5A10.5P heterostructures lattice matched to GaAs. Basically the interest in In0.5Ga0.5P and In0.5A10.5P derives from their unique material properties as well as their band alignment to GaAs. In this paper, we review the growth, fabrication, and performance of In0.5A10.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors (HEMT’s), InO.5A10.5P/GaAs heterojunction bipolar transistors (HBT’s), and In0.5Ga0.5P red light emitting diodes (LED’s) grown on Ge/graded GexSil-x/Si substrates. The results provide a solid demonstration of the feasibility of using In0.5Ga0.5P and In0.5A10.5P prepared by GSMBE for manufacturing GaAs-based optoelectronic devices.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ, 07974, USA

    Jenn-Ming Kuo

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  1. Jenn-Ming Kuo
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Kuo, JM. Electronic and Photonic Device Applications of In0.5Ga0.5P and In0.5Al0.5P Grown by Gas Source Molecular Beam Epitaxy. MRS Online Proceedings Library 340, 71–82 (1994). https://doi.org/10.1557/PROC-340-71

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  • DOI: https://doi.org/10.1557/PROC-340-71

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