Skip to main content
SpringerLink
Log in

Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

In this paper, we report chemical beam epitaxy (CBE) of GaAs, and for the first time, Arion laser-assisted CBE using triethylgallium (TEGa) and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. Samples grown at substrate temperatures above 490° C show n-type conduction, while those grown at lower temperatures show p-type conduction. An unintentional doping concentration of n∼lx1016 cm-3 with an electron mobility of 5200 cm2/V.s at 300 K and 16000 cm2/V.s at 77 K have been achieved. These are the best results reported for GaAs grown with TDMAAs. Laser-assisted CBE of GaAs is studied in the substrate temperature range of 240-550°C. There are two different substrate-temperature regions for laser-enhanced growth, 265 to 340°C and 340 to 440°C, which are believed to be caused by different TEGa decomposition mechanisms. The laser-assisted growth with TDMAAs, compared to AS4 or AsH3, shows a wider range of growth enhancement at low substrate temperatures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.R. Abernathy, P. W. Wisk, D. A. Bohling, and G. T. Muhr, Appl. Phys. Lett. 60, 2421 (1992).

    Article  CAS  Google Scholar 

  2. C. R. Abernathy, P. W. Wisk, S. J. Pearton, F. Ren, D. A. Bohling, and G. T. Muhr, J. Cryst Growth 124, 64 (1992).

    Article  CAS  Google Scholar 

  3. T. Koui, I. Suemune, K. Hamaoka, K. Fujii, A. Kishimoto, Y. Honda, and M. Yamanishi, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 408 (1991).

    Google Scholar 

  4. K. Fujii, I. Suemune, and M. Yamanishi, Appl. Phys. Lett. 61, 2577 (1992).

    Article  CAS  Google Scholar 

  5. K. Fujii, I. Suemune, T. Koui, and M. Yamanishi, Appl. Phys. Lett. 60, 1498 (1992).

    Article  CAS  Google Scholar 

  6. G. Zimmermann, H. Protzmann, T. Marschner, O. Zsebök, W. Stolz, E. O. Göbel, P. Gimmnich, J. Lorberth, T. Filz, P. Kurpas, and W. Richter, J. Cryst. Growth 129, 37 (1993).

    Article  CAS  Google Scholar 

  7. Y. Aoyagi, M. Kanazawa, A. Doi, S. Iwai and S. Namba, J. Appl. Phys. 60, 3131 (1986).

    Article  CAS  Google Scholar 

  8. V. M. Donnelly, C. W. Tu, J. C. Beggy, V. R. McCrary, M. G. Lamont, T. D. Harris, F. A. Baiochi and R. C. Farrow, Appl. Phys. Lett. 52, 1065 (1988).

    Article  CAS  Google Scholar 

  9. H. Sugiura, T. Yamada and R. Iga, Jpn. J. Appl. Phys. 29, L1 (1990).

    Article  CAS  Google Scholar 

  10. H. K. Dong, B. W. Liang, M. C. Ho, S. Hung and C. W. Tu, J. Cryst. Growth 124, 181 (1992).

    Article  CAS  Google Scholar 

  11. D. E. Hill, J. Appl. Phys. 41, 1815 (1970).

    Article  CAS  Google Scholar 

  12. C. Hilsum, Electron Lett. 10, 259 (1974).

    Article  CAS  Google Scholar 

  13. G. E. Stillman and C. M. Wolfe, Thin Solid Films 31, 69 (1976).

    Article  CAS  Google Scholar 

  14. H. Sugiura, R. Iga, and T. Yamada, J. Cryst. Growth 120, 389 (1992).

    Article  CAS  Google Scholar 

  15. T. Yamada, R. Iga and H. Sugiura, Jpn. J. Appl. Phys. 28, L1883 (1989).

    Article  CAS  Google Scholar 

  16. R. Robertson Jr, T. H. Chiu, W. T. Tsang, and J. E. Cunningham, J. Appl. Phys. 64, 877 (1988).

    Article  CAS  Google Scholar 

  17. B. W. Liang and C. W. Tu, Appl. Phys. Lett. 57, 689 (1990).

    Article  CAS  Google Scholar 

  18. T. Martin, and C. R. Whitehouse, J. Cryst. Growth 105, 57 (1990).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California, 92093-0407, USA

    H. K. Dong, N. Y. Li & C. W. Tu

  2. AT&T Bell Laboratories, Breinigsville, Pennsylvania, 18031-9359, USA

    M. Geva

  3. Air Force Wright Laboratory, Wright-Patterson AFB, Ohio, 45433-6543, USA

    W. C. Mitchel

Authors
  1. H. K. Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Y. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C. W. Tu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Geva
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. W. C. Mitchel
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Dong, H.K., Li, N.Y., Tu, C.W. et al. Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic. MRS Online Proceedings Library 340, 173–179 (1994). https://doi.org/10.1557/PROC-340-173

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-340-173

Search

Navigation