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Chemical Beam Epitaxial Growth of GaP and InP Using Alternative, Safer Precursors

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Abstract

Phosphorus (P)-based alloys are important for applications in areas including optoelectronics and high speed electronics. Gas phase technologies such as organometallic vapor phase epitaxy (OMVPE) and chemical beam epitaxy (CBE) have traditionally used the extremely dangerous hydride, phosphine (PH3). Less hazardous alternatives need to be found. Three such alternative P-sources are: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphine (TDMAP). InP and GaP growth results using TBP, BPE, and TDMAP along with a brief discussion of the pyrolysis of these alternative P-sources are presented. InP has been grown using ethyldimethylindium and pre-cracked BPE with excellent surface morphology and strong 10 K photoluminescence with a half width of 4.8 meV. The residual doping level typically was in the high 1015 to low 1016 cm-3 range. GaP has been grown at a substrate temperature of 480°C without precracking the TDMAP.

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References

  1. G.B. Stringfellow, Ann. Rev. Mater. Sci. 8, 73 (1978).

    Article  CAS  Google Scholar 

  2. G.B. Stringfellow, Semiconductor and Semimetals, edited by W.T Tsang (Academic, New York, 1985), Vol 22A, pp. 209–255.

    Article  Google Scholar 

  3. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice. (Academic Press, Boston, 1989).

    Google Scholar 

  4. W.T. Tsang, Appl. Phys. Lett. 45, 1234 (1984).

    Article  CAS  Google Scholar 

  5. W.T Tsang, A.H. Dayem, T.H. Chiu, J.E. Cunningham, E.F. Shubert, J.A. Ditzenberger, J. Shah, J.L. Zyskind, and N. Tabatabaie, Appl. Phys. Lett. 49, 170 (1986).

    Article  CAS  Google Scholar 

  6. S.H. Li, C.A. Larsen, N.I. Buchan, and G.B. Stringfellow, J. Electron. Mater. 18, 457 (1989).

    Article  CAS  Google Scholar 

  7. S.H. Li, C.A. Larsen, N.I. Buchan, and G.B. Stringfellow, J. Appl. Phys. 65, 5161 (1989).

    Article  CAS  Google Scholar 

  8. A. Chin, P. Martin, U. Das, J. Mazurowski, and J. Ballingall, Appl. Phys. Lett. 61, 2099 (1992).

    Article  CAS  Google Scholar 

  9. D. Ritter, M.B. Panish, R.A. Hamm, D. Gershoni, and I. Brener, Appl. Phys. Lett. 56, 1448 (1990).

    Article  CAS  Google Scholar 

  10. E.A. Beam III, T.S. Henderson, A.C. Seabaugh and J.Y. Yang, J. Crystal Growth 116, 436 (1992).

    Article  CAS  Google Scholar 

  11. G. Hincelin, M. Zahzouh, R. Mellet, and A.M. Pougnet, J. Crystal Growth 120, 119 (1992).

    Article  CAS  Google Scholar 

  12. C. Hill, L.P. Sadwick and G.B. Stringfellow, submitted to J. Cryst. Growth.

  13. C.A. Larsen, N.I. Buchan and G.B. Stringfellow, J. Cryst. Growth 85, 148 (1987).

    Article  CAS  Google Scholar 

  14. W.C. Danen and F.A. Neugebauer, Angew. Chem. Internat. Edit. 14, 783 (1975).

    Article  Google Scholar 

  15. A.C. Jones, J. Cryst. Growth 129, 728 (1993).

    Article  CAS  Google Scholar 

  16. J. Knauf, D. Schmitz, G. Strauch, H. Jurgensen, and M. Heyen, J. Cryst. Growth 93, 34 (1988).

    Article  CAS  Google Scholar 

  17. K.L. Fry, C.P Kuo, C.A. Larsen, R.M. Cohen, and G.B. Stringfellow, J. Electron Mat. 15, 91 (1986).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Electrical Engineering, The University of Utah, Salt Lake City, Utah, 84112, USA

    L. P. Sadwick & G. B. Stringfellow

  2. Department of Material Science and Engineering, The University of Utah, Salt Lake City, Utah, 84112, USA

    C. W. Kim, H. H. Ryu, C. W. Hill & G. B. Stringfellow

  3. Naval Air Warfare Center Weapons Division, China Lake, CA, 93555, USA

    R. W. Gedridge Jr

  4. EpiChem, Ltd., Power Road, Bromborough, Wirral, Merseyside, L623QF, UK

    A. C. Jones

Authors
  1. L. P. Sadwick
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  2. C. W. Kim
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  3. H. H. Ryu
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  4. C. W. Hill
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  5. G. B. Stringfellow
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  6. R. W. Gedridge Jr
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  7. A. C. Jones
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Sadwick, L.P., Kim, C.W., Ryu, H.H. et al. Chemical Beam Epitaxial Growth of GaP and InP Using Alternative, Safer Precursors. MRS Online Proceedings Library 340, 167–172 (1994). https://doi.org/10.1557/PROC-340-167

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  • DOI: https://doi.org/10.1557/PROC-340-167

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