Abstract
We have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured.
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Moran, G.J., Morrison, I. & Matthai, C.C. A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates. MRS Online Proceedings Library 340, 315–320 (1994). https://doi.org/10.1557/PROC-340-315
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DOI: https://doi.org/10.1557/PROC-340-315