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Growth Temperature Uniformity of MBE-Grown GaAs Determined by Scanning Room Temperature Photoluminescence

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Abstract

We have used scanning room temperature photoluminescence to map GaAs quantum well widthsand AIGaAs barrier compositions over 2-inch and 3-inch diameter epitaxial layers grown by MBE at temperatures ranging from 600 to 700ºC. Analysis of these maps allows a nondestructive quantitative analysis of the GaAs growth rate uniformity from which we can calculate the temperature distribution during growth. We have used this technique to compare the thermal uniformity of various substrate holders designed for use in the Intevac ModGenII MBE system.

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Authors and Affiliations

  1. Amoco Technology Company, P.O. Box 3011, Naperville, IL, 60566, USA

    K. Stair, T. Bird, A. Moretti & F. Chambers

  2. Amoco Corporation, P.O. Box 3011, Naperville, IL, 60566, USA

    C. Choi-Feng

Authors
  1. K. Stair
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  2. T. Bird
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  3. A. Moretti
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  4. F. Chambers
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  5. C. Choi-Feng
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Stair, K., Bird, T., Moretti, A. et al. Growth Temperature Uniformity of MBE-Grown GaAs Determined by Scanning Room Temperature Photoluminescence. MRS Online Proceedings Library 340, 29–34 (1994). https://doi.org/10.1557/PROC-340-29

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  • DOI: https://doi.org/10.1557/PROC-340-29

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