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Dry ETCH Induced Defects and H Passivation of GaAs Surfaces Produced by CH4/H2/Ar Plasmas

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Abstract

An investigation was performed of surface region etch-induced damage of GaAs magnetron reactive ion etched in CH4/H2/Ar gas mixtures for 10% and 20% Ar concentrations. Schottky barrier I-V measurements showed that changes in surface potential (ϕb) upon etching and subsequent annealing can be explained by a combination of H passivation effects and As removal from the surface region. Changes in Schottky barrier ideality factor (n) can be explained by the presence of etch-induced surface region defects such as donor-like As vacancies and deep level recombination centers, both of which are passivated by H. Schottky barrier C-V measurements indicated that H passivation extends about 0.3 μm below the surface. Rapid thermal annealing at 400°C for 30 s was effective in removing most of the H passivation effects.

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Authors and Affiliations

  1. Army Research Laboratory, Ft. Monmouth, NJ, 07703, USA

    G. F. McLane & W. R. Buchwald

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  1. G. F. McLane
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  2. W. R. Buchwald
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McLane, G.F., Buchwald, W.R. Dry ETCH Induced Defects and H Passivation of GaAs Surfaces Produced by CH4/H2/Ar Plasmas. MRS Online Proceedings Library 340, 221–225 (1994). https://doi.org/10.1557/PROC-340-221

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