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AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal

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We report attaining (3x2) surface reconstruction with streaky reflection high energy electron diffraction (RHEED) patterns on Al0.4Ga0.6As after in-situ Cl2 chemical etch and ultra high vacuum (UHV) anneal. Secondary ion-mass spectrometry (SIMS) analysis at the regrown/etched Al0.4Ga0.6 As interface reveals impurities of O and C in the level of (5±1) × 1012 cm-2 and (3±1) × 1012 cm-2, respectively. These impurity levels are 10 times less than those of Al0.4Ga0.6 As after in-situ electron cyclotron resonance (ECR) plasma etch and UHV anneal without Cl2 chemical etch.

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Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA

    M. Hong, J. P. Mannaerts, L. H. Grober, F. A. Thiel & R. S. Freund

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  1. M. Hong
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  2. J. P. Mannaerts
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  3. L. H. Grober
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  4. F. A. Thiel
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  5. R. S. Freund
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Hong, M., Mannaerts, J.P., Grober, L.H. et al. AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal. MRS Online Proceedings Library 340, 213–219 (1994). https://doi.org/10.1557/PROC-340-213

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  • DOI: https://doi.org/10.1557/PROC-340-213

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