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GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes

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Abstract

We have fabricated resonant tunneling diodes (RTD’s) containing a GaInAs quantum well and strained GaInP barriers. These diodes exhibit good characteristics at 80 K with a peak to valley current ratio of 1.34 which is comparable to other reports for RTD in this material system. Additional RTD’s were made using a InAs rich well region to study the effect of strain compensation. To investigate the properties of these structures, transmission electron microscopy (TEM) and low temperature photoluminescence (PL) were performed. TEM shows that both RTD structures contain misfit dislocations. PL measurements indicate that the dislocations are not significantly affecting the GaInAs quantum well.

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Authors and Affiliations

  1. Departments of Materials, University of California, Santa Barbara, CA, 93106, USA

    C. M. Reaves & S. P. DenBaars

  2. Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA

    J. C. Yen, N. A. Cevallos & U. K. Mishra

Authors
  1. C. M. Reaves
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  2. J. C. Yen
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  3. N. A. Cevallos
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  4. U. K. Mishra
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  5. S. P. DenBaars
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Reaves, C.M., Yen, J.C., Cevallos, N.A. et al. GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes. MRS Online Proceedings Library 340, 147–152 (1994). https://doi.org/10.1557/PROC-340-147

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