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A Second-Harmonic Generation Study of GaAs-Oxide Removal Using a Hydrogen Plasma

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Abstract

We observed a second-harmonic generation (SHG) in reflection from a GaAs (100) surface during an oxide removal process using a pulsed hydrogen plasma. We found that the P-polarized SH intensity under P-polarized excitation decreased in the [011] azimuth of incidence and increased in the [011] azimuth of incidence during hydrogen plasma irradiation. The input polarization angle dependence of the P-polarized SH intensity before and after oxide removal was fitted to a model which includes both the surface and bulk SHG contributions. We estimated the thickness of the removed oxide based on the bulk SHG contribution change.

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Authors and Affiliations

  1. Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki, 300-26, Japan

    Takahiro Kimura & Chikashi Yamada

Authors
  1. Takahiro Kimura
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  2. Chikashi Yamada
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Kimura, T., Yamada, C. A Second-Harmonic Generation Study of GaAs-Oxide Removal Using a Hydrogen Plasma. MRS Online Proceedings Library 340, 207–212 (1994). https://doi.org/10.1557/PROC-340-207

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  • DOI: https://doi.org/10.1557/PROC-340-207

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