Skip to main content
SpringerLink
Log in

Kinetic Monte Carlo Simulations of Ge Segregation During Epitaxial Growth of Si-SixGel-x Heterostructures

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The temperature dependence of germanium surface segregation during growth by solid source SiGe molecular beam epitaxy was studied by x-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling. Germanium segregation persisted at temperatures 60ºC below that predicted by a two-state exchange model. KMC simulations, where film growth, surface diffusion, and surface segregation are modeled consistently, successfully describe the low temperature segregation of germanium. Realistic descriptions of MBE must follow the physical rates of the growth, surface diffusion, and surface segregation processes. A specific, step mediated exchange mechanism is also considered and shown to lead to surface segregation. While this model of Ge segregation seems possible, more work is necessary to obtain a consistent set of energy barriers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. Godbey and M. Ancona, Appl. Phys. Lett. 61, 2217 (1992).

    Article  CAS  Google Scholar 

  2. J. Brunner, J. Nutzel, M. Gail, U. Menczigar, and G. Abstreiter, J. Vac. Sci. Technol. B11, 1097 (1993).

    Article  Google Scholar 

  3. S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 59, 2103 (1991).

    Article  CAS  Google Scholar 

  4. D. E. Jesson, S. J. Pennycook, and J. M. Baribeau, Phys. Rev. Lett. 66, 750 (1991).

    Article  CAS  Google Scholar 

  5. M. R. Wilby and S. Clark, Graphics and Animation in Surface Science, (Adan Hilger, New York, 1992).

    Google Scholar 

  6. Walter A. Harrison, Electronic Structure and the Properties of Solids, (Dover, New York, 1989).

    Google Scholar 

  7. H. Jorke, Surface Science 193, 569 (1988).

    Article  CAS  Google Scholar 

  8. D. J. Chadi, Phys. Rev. Lett. 59, 1691 (1987).

    Article  CAS  Google Scholar 

  9. Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Legally, Phys. Rev. Lett. 66, 1998 (1991).

    Article  CAS  Google Scholar 

  10. Z. Zhang, Y-T. Lu, and H. Metiu, Surface Science 255, L543 (1991).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Naval Research Laboratories, Washington, DC, 20375, USA

    J. Deppe, J. V. Lill, D. J. Godbey & K. D. Hobart

Authors
  1. J. Deppe
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. V. Lill
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. J. Godbey
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. D. Hobart
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Deppe, J., Lill, J.V., Godbey, D.J. et al. Kinetic Monte Carlo Simulations of Ge Segregation During Epitaxial Growth of Si-SixGel-x Heterostructures. MRS Online Proceedings Library 340, 47–52 (1994). https://doi.org/10.1557/PROC-340-47

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-340-47

Search

Navigation