Abstract
In this work we present structural characterization by both Scanning and Transmission Electron Microscopy of InAlAs/InGaAs heterostructures grown on InP substrates. Our attention is devoted to study the two main problems limiting the application of these structures as devices: the presence of defects on the epilayer and the growth habit at theedges of the well. Our results show that a different faceting between the two <110> orthogonal directions develops during the growth and that a high density of defects is observed just at the intersection between the layers grown inside the windows and on the walls. Moreover, the presence of a polycrystalline layer developing over the mask indicates that a selective growth occurs.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. Vodjani, M. Erman, J.B. Theeten, J. Cryst. Growth 71, 141 (1985).
C. Ghosh, R.L. Layman, Appl. Phys. Lett. 445, 1229 (1984).
K. Kamon, S. Takagishi, H. Mori, Jpn. J. Appl. Phys. 25, L10 (1986).
E. Tokumitsu, Y. Kodou, M. Konagai, K. Takahashi, J. Appl. Phys. 55, 3163 (1985).
H. Heinecke, A. Brauers, F. Grafahrend, C. Plass, N. Putz, K. Werner, M. Weyers, H. Luth, P. Balk, J. Cryst. Growth 77, 303 (1986).
G.J. Davies, W.J. Duncan, P.J. Skevington, C.L. Frenc, J.S. Foord, Mater. Sci. Eng. B 9, 93 (1991).
A. Okamoto, K. Ohata, J. Electr. Mat. 18, 111 (1989).
J.S.C. Chang, K.W. Carey, J.E. Turner, L.A. Hodge, J. Electr. Mat. 19, 345 (1990).
The patterned substrates were prepared by the group of Prof. B. Thomas and Prof. D.V. Morgan (UWCC, Cardiff, UK, 1990).
F. Peiró, A. Cornet, A. Herms, J.R. Morante, A. Georgakilas, G. Halkias, J. Vac. Sci. Technol. 10, 2148 (1992).
A. Georgakilas, K. Zekentes, K. Tsagaraki, P. Lefebvre, J. Allegre, A. Christou, 4th Int. Conf. on InP and Rel. Mat., Newport (IEEE, New York, 1992), p. 101.
A. Georgakilas, A. Christou, P. Lefebvre, J. Allegre, K. Zekentes, G. Halkias, Appl. Phys. Lett. 61, 798 (1992).
A. Bradley, A. William, J. Appl. Phys. 68, 6 (1990).
F. Peiró, A. Cornet, A. Herms, J.R. Morante, A. Georgakilas, G. Halkias, Mat. Res. Soc. Symp. Proc. 240, 189 (1992).
M. Ohtsuka, A. Suzuki, J. of Crystal Growth 95, 55 (1989).
T. Yuasa, M. Mannoh, T. Yamada, S. Naritsuka, K. Shinozaki, M. Ishii, J. Appl. Phys., 62, 764 (1987).
A.T. Hunter, Appl. Phys. Lett. 47, 715 (1989).
M. Hata, T. Isu, A. Watanabe, Y. Katamaya, J. Vac. Sc. Technol. B. 8, 692 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Peiro, F., Cornet, A., Morante, J.R. et al. Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates. MRS Online Proceedings Library 340, 59–64 (1994). https://doi.org/10.1557/PROC-340-59
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-340-59