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A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

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Abstract

A concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III–V alloys. The ground state ordered structures of ternary III–V semiconductor alloys are deduced and a dynamic model is established.

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Author notes

  1. Bing-Lin Gu

    Present address: Department of Physics, Tsinghua University, Beijing, 100084, China

Authors and Affiliations

  1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980, Japan

    Bing-Lin Gu, Jing-Zhi Yu, Xiao Hu, Kaoru Ohno & Yoshiyuki Kawazoe

Authors
  1. Bing-Lin Gu
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  2. Jing-Zhi Yu
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  3. Xiao Hu
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  4. Kaoru Ohno
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  5. Yoshiyuki Kawazoe
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Gu, BL., Yu, JZ., Hu, X. et al. A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth. MRS Online Proceedings Library 340, 111–116 (1994). https://doi.org/10.1557/PROC-340-111

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  • DOI: https://doi.org/10.1557/PROC-340-111

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