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The Effect of Phosphine Pressure on the Band Gap of Ga0.5In0.5P

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Abstract

The band gap of Ga0.5In0.5P is studied as a function of phosphine pressure, B-type substrate misorientation, growth rate, and growth temperature, with emphasis placed on the effect of the phosphine pressure. Over most of the parameter space explored (high temperatures, large substrate misorientations, and low growth rates), the band gap increases with decreasing phosphine. This increase is proposed to be caused by lower phosphorus coverage of the surface, resulting in a different surface structure that doesn’t promote ordering. The implications of this effect on the observed variations of band gap with growth temperature, substrate misorientation, and growth rate are discussed. For regions of parameter space in which the ordering appears to be kinetically limited by surface diffusion, the band gap increases slightly with phosphine pressure, consistent with observations that increased group-V pressure decreases the group-III surface diffusion length.

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References

  1. S. R. Kurtz, J. M. Olson and A. Kibbler, Appl. Phys. Lett. 57, 1922 (1990).

    Article  CAS  Google Scholar 

  2. M. Kondow, H. Kakibayashi, S. Minagawa, Y. Inoue, T. Nishino and Y. Hamakawa, Appl. Phys. Lett. 53, 2053 (1988).

    Article  CAS  Google Scholar 

  3. A. Gomyo, K. Kobayashi, S. Kawata, I. Hino, T. Suzuki and T. Yuasa, J. Cryst. Growth 77, 367 (1986).

    Article  CAS  Google Scholar 

  4. A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino and T. Yuasa, Appl. Phys. Lett. 50, 673 (1987).

    Article  CAS  Google Scholar 

  5. T. Suzuki, A. Gomyo, S. Iijima, K. Kobayashi, S. Kawata, I. Hino and T. Yuasa, Jpn. J. Appl. Phys. 27, 2098 (1988).

    Article  CAS  Google Scholar 

  6. D. S. Cao, A. W. Kimball, G. S. Chen, K. L. Fry and G. B. Stringfellow, J. Appl. Phys. 66, 5384 (1989).

    Article  CAS  Google Scholar 

  7. D. S. Cao, E. H. Reihlen, G. S. Chen, A. W. Kimball and G. B. Stringfellow, J. Cryst. Growth 109, 279 (1991).

    Article  CAS  Google Scholar 

  8. S. R. Kurtz, J. M. Olson, D. J. Friedman, A. E. Kibbler and S. Asher, J. Electron. Mater. 23, 431 (1994).

    Article  CAS  Google Scholar 

  9. S. R. Kurtz, J. M. Olson, D. J. Arent, A. E. Kibbler and K. A. Bertness in Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill and T. Kuech (Mater. Res. Soc. Proc. 312, Pittsburgh, PA, 1993) p. 83.

  10. M. Suzuki, Y. Nishikawa, M. Ishikawa and Y. Kokubun, J. Cryst. Growth 113, 127 (1991).

    Article  CAS  Google Scholar 

  11. N. Buchan, W. Heuberger, A. Jakubowicz and P. Roentgen, Inst. Phys. Conf. Ser. 120, 529 (1991).

    Google Scholar 

  12. J. F. Lin, M. J. Jou, C. Y. Chen and B. J. Lee, J. Cryst. Growth 124, 415 (1992).

    Article  CAS  Google Scholar 

  13. S. R. Kurtz, J. M. Olson, D. J. Arent, M. H. Bode and K. A. Bertness, Appl. Phys. Lett. 75, in press. (1994).

  14. T. Suzuki and A. Gomyo in Semiconductor Interfaces at the Sub-Nanometer Scale, edited by H. W. M. Salemink and M. D. Pashley (Kluwer Academic 243, Dordrecht, Netherlands, 1993) p. 11.

  15. T. Suzuki, A. Gomyo, I. Hino, K. Kobayashi, S. Kawata and S. Iijima, Jpn. J. Appl. Phys. 27, L1549 (1988).

    Article  CAS  Google Scholar 

  16. A. Gomyo, H. Hotta, I. Hino, S. Kawata, K. Kobayashi and T. Suzuki, Jpn. J. Appl. Phys. 28, L1330 (1989).

    Article  CAS  Google Scholar 

  17. S. R. Kurtz, J. M. Olson, J. P. Goral, A. Kibbler and E. Beck, J. Electron. Mater. 19, 825 (1990).

    Article  CAS  Google Scholar 

  18. A. Gomyo, T. Suzuki and S. lijima, Phys. Rev. Lett. 60, 2645 (1988).

    Article  CAS  Google Scholar 

  19. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 56, 662 (1990).

    Article  CAS  Google Scholar 

  20. P. Gavrilovic, F. P. Dabkowski, K. Meehan, J. E. Williams, W. Stutius, K. C. Hsieh, N. Holonyak, M. A. Shahid and S. Mahajan, J. Cryst. Growth 93, 426 (1988).

    Article  CAS  Google Scholar 

  21. I. J. Murgatroyd, A. G. Norman and G. R. Booker, J. Appl. Phys. 67, 2310 (1990).

    Article  CAS  Google Scholar 

  22. F. K. LeGoues, V. P. Kesan, S. S. Iyer, J. Tersoff and R. Tronmp, Phys. Rev. Lett. 64, 2038 (1990).

    Article  CAS  Google Scholar 

  23. S. Froyen and A. Zunger, J. Vac. Sci. Tech. B 9, 2176 (1991).

    Article  CAS  Google Scholar 

  24. A. Gomyo, K. Makita, I. Hino and T. Suzuki, Phys. Rev. Lett. 72, 673 (1994).

    Article  CAS  Google Scholar 

  25. J. E. Ayers, S. K. Ghandhi and L. J. Schowalter, J. Cryst. Growth 113, 430 (1991).

    Article  CAS  Google Scholar 

  26. S. Nagata and T. Tanaka, J. Appl. Phys. 48, 940 (1977). The surface diffusion process that they characterize is probably different from the diffusion process that leads to ordering. Nevertheless, it is likely that both processes show similar dependencies on phosphine pressure.

    Article  CAS  Google Scholar 

  27. R. Osorio, J. E. Bernard, S. Froyen and A. Zunger, Phys. Rev. B 45, 11173 (1992).

    Article  CAS  Google Scholar 

  28. N. Buchan, C. A. Larsen and G. B. Stringfellow, Appl. Phys. Lett. 51, 1024 (1987).

    Article  CAS  Google Scholar 

  29. H. Hori, H. Ishikawa and M. Mashita, Jpn. J. Appl. Phys. Lett. 32, L707 (1993).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. 1617 Cole Blvd., Golden, CO, 80401, USA

    Sarah R. Kurtz, D. J. Arent, K. A. Bertness & J. M. Olson

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  1. Sarah R. Kurtz
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  2. D. J. Arent
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  3. K. A. Bertness
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  4. J. M. Olson
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Kurtz, S.R., Arent, D.J., Bertness, K.A. et al. The Effect of Phosphine Pressure on the Band Gap of Ga0.5In0.5P. MRS Online Proceedings Library 340, 117–122 (1994). https://doi.org/10.1557/PROC-340-117

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