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Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells

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Abstract

We study the optical properties of metalorganic vapour phase epitaxy (MOVPE) grown (Ga,In)As-GaAs single quantum wells as a function of the growth parameters. Our objective is to study the properties of the type II light-hole excitons with light-hole wave function delocalized in the thick GaAs layers and electrons confined in the ternary alloy. However, marked structures (like for type I excitons) are observed in the reflectivity spectra. This we interpret in the context of a novel approach of the exciton problem via a self-consistent calculation of the electron-hole interaction.

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Authors and Affiliations

  1. Université de Montpellier II-Groupe d’Etudes des Semiconducteurs, Case courrier, 074-4095, Montpellier Cedex 5, France

    P. Bigenwald, O. Laire, X. Zhang, O. Briot, B. Gil, T. Cloitre & R. L. Aulombard

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  1. P. Bigenwald
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  2. O. Laire
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  3. X. Zhang
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  4. O. Briot
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  5. B. Gil
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  6. T. Cloitre
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  7. R. L. Aulombard
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Bigenwald, P., Laire, O., Zhang, X. et al. Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells. MRS Online Proceedings Library 340, 321–326 (1994). https://doi.org/10.1557/PROC-340-321

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  • DOI: https://doi.org/10.1557/PROC-340-321

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