1. Editorial

   • Paolo Lugli
   • Aldo Di Carlo

   Editorial Introduction Pages: 71 - 72

2. Scaling MOSFETs to the Limit: A Physicists's Perspective

   • M.V. Fischetti

   OriginalPaper Pages: 73 - 79

3. Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs

   • F.M. Bufler
   • A. Schenk
   • W. Fichtner

   OriginalPaper Pages: 81 - 84

4. Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation

   • Gulzar A. Kathawala
   • Mohamed Mohamed
   • Umberto Ravaioli

   OriginalPaper Pages: 85 - 89

5. Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs

   • Hideaki Tsuchiya
   • Motoki Horino
   • Tanroku Miyoshi

   OriginalPaper Pages: 91 - 95

6. Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

   • Tatsuya Ezaki
   • Philipp Werner
   • Masami Hane

   OriginalPaper Pages: 97 - 103

7. Does Circulation in Individual Current States Survive in the Total Current Density?

   • S.E. Laux
   • A. Kumar
   • M.V. Fischetti

   OriginalPaper Pages: 105 - 108

8. Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

   • Hiroshi Nakatsuji
   • Yoshinari Kamakura
   • Kenji Taniguchi

   OriginalPaper Pages: 109 - 112

9. An Effective Potential Approach to Modeling 25 nm MOSFET Devices

   • S. Ahmed
   • C. Ringhofer
   • D. Vasileska

   OriginalPaper Pages: 113 - 117

10. Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

    • H. Takeda
    • N. Mori
    • C. Hamaguchi

    OriginalPaper Pages: 119 - 122

11. “Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs

    • G. Fiori
    • G. Iannaccone

    OriginalPaper Pages: 123 - 126

12. Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities

    • L. Bonci
    • M. Macucci
    • U. Ravaioli

    OriginalPaper Pages: 127 - 130

13. Quantum Corrected Monte Carlo Simulation of Semiconductor Devices Using the Effective Conduction-Band Edge Method

    • Ting-Wei Tang
    • Bo Wu

    OriginalPaper Pages: 131 - 135

14. Proximity Effect of the Contacts on Electron Transport in Mesoscopic Devices

    • Andrea Bertoni
    • Paolo Bordone
    • Carlo Jacoboni

    OriginalPaper Pages: 137 - 140

15. Microscopic Modelling of Quantum Open Systems: A Generalized Wigner-Function Approach

    • Remo Proietti Zaccaria
    • Rita C. Iotti
    • Fausto Rossi

    OriginalPaper Pages: 141 - 145

16. A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations

    • H. Kosina
    • M. Nedjalkov
    • S. Selberherr

    OriginalPaper Pages: 147 - 151

17. Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices

    • John R. Barker

    OriginalPaper Pages: 153 - 161

18. A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

    • M. Boriçi
    • J.R. Watling
    • J.R. Barker

    OriginalPaper Pages: 163 - 167

19. High Electron Mobility Limited by Remote Impurity Scattering

    • C. Hamaguchi

    OriginalPaper Pages: 169 - 171

20. Gauge-Invariant Formulation of Fermi's Golden Rule and Its Application to High-Field Transport in Semiconductors

    • Emanuele Ciancio
    • Rita C. Iotti
    • Fausto Rossi

    OriginalPaper Pages: 173 - 176

21. Quantum and Semi-Classical Transport in NEMO 1-D

    • Gerhard Klimeck

    OriginalPaper Pages: 177 - 182

22. Coupling Maxwell's Equations to Full Band Particle-Based Simulators

    • J.S. Ayubi-Moak
    • S.M. Goodnick
    • S. El-Ghazaly

    OriginalPaper Pages: 183 - 190

23. Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool

    • Rita C. Iotti
    • Fausto Rossi

    OriginalPaper Pages: 191 - 195

24. First Principles Calculations of Auger Recombination and Impact Ionization Rates in Semiconductors

    • S. Picozzi
    • R. Asahi
    • A.J. Freeman

    OriginalPaper Pages: 197 - 202

25. Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization

    • Y. Kazami
    • D. Kasai
    • K. Horio

    OriginalPaper Pages: 203 - 206

26. Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs

    • N.J. Pilgrim
    • W. Batty
    • R.W. Kelsall

    OriginalPaper Pages: 207 - 211

27. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

    • J. Branlard
    • S. Aboud
    • M. Saraniti

    OriginalPaper Pages: 213 - 217

28. Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

    • A. Gehring
    • H. Kosina
    • S. Selberherr

    OriginalPaper Pages: 219 - 223

29. Restoration of Magnetization Distributions from Joint Magnetic Force Microscopy Measurements and Micromagnetic Simulations

    • G. Csaba
    • W. Porod

    OriginalPaper Pages: 225 - 229

30. BioMOCA: A Transport Monte Carlo Model for Ion Channels

    • T. van der Straaten
    • G. Kathawala
    • U. Ravaioli

    OriginalPaper Pages: 231 - 237

31. Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations

    • S. Aboud
    • M. Saraniti
    • R. Eisenberg

    OriginalPaper Pages: 239 - 243

32. Ion Channels as Devices

    • Bob Eisenberg

    OriginalPaper Pages: 245 - 249

33. Coherent Phonon Scattering in Molecular Devices

    • A. Pecchia
    • M. Gheorghe
    • A. Di Carlo

    OriginalPaper Pages: 251 - 256

34. Brownian Ionic Channel Simulation

    • C. Millar
    • A. Asenov
    • S. Roy

    OriginalPaper Pages: 257 - 262

35. Quantum Control of Capture Processes into Localized States of a Quantum Dot

    • T. Kuhn
    • M. Glanemann
    • V.M. Axt

    OriginalPaper Pages: 263 - 267

36. Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots

    • M. Sabathil
    • S. Birner
    • P. Vogl

    OriginalPaper Pages: 269 - 273

37. Microscopic Description of Nanostructures Grown on (N11) Surfaces

    • Michael Povolotskyi
    • Jérôme Gleize
    • Peter Vogl

    OriginalPaper Pages: 275 - 279

38. Signatures of a Discrete Level Spectrum and Dynamical Tunneling in the Conductance of a Large Open Quantum Dot

    • R. Akis
    • A. Ramamoorthy
    • J.P. Bird

    OriginalPaper Pages: 281 - 284

39. Mobility Variations in Ultra Small Devices due to Random Discrete Dopants

    • Craig Alexander
    • Jeremy R. Watling
    • Asen Asenov

    OriginalPaper Pages: 285 - 289

40. Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering

    • Andrea Bertoni

    OriginalPaper Pages: 291 - 295

41. Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors

    • A. Bolognesi
    • A. Di Carlo

    OriginalPaper Pages: 297 - 300

42. Advanced Simulation of Semiconductor Devices by Artificial Neural Networks

    • A. Caddemi
    • N. Donato
    • M.G. Xibilia

    OriginalPaper Pages: 301 - 307

43. Ballistic Transport in SiGe and Strained-Si MOSFETs

    • G. Curatola
    • G. Iannaccone

    OriginalPaper Pages: 309 - 312

44. Splitting-Scheme Solution of the Collisionless Wigner Equation with Non-Parabolic Band Profile

    • Lucio Demeio

    OriginalPaper Pages: 313 - 316

45. Modeling Hot-Electron Injection in pFET's

    • Chris Duffy
    • Paul Hasler

    OriginalPaper Pages: 317 - 322

46. Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations

    • Gareth Roy
    • Andrew R. Brown
    • Scott Roy

    OriginalPaper Pages: 323 - 327

47. Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

    • M.J. Gilbert
    • R. Akis
    • D.K. Ferry

    OriginalPaper Pages: 329 - 334

48. Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure

    • D. Guan
    • A. Godoy
    • F. Gamiz

    OriginalPaper Pages: 335 - 339

49. Simulation Study of High Performance III-V MOSFETs for Digital Applications

    • K. Kalna
    • L. Yang
    • A. Asenov

    OriginalPaper Pages: 341 - 345

50. Study of RF Linearity in sub-50 nm MOSFETs Using Simulations

    • Wei Ma
    • Savas Kaya
    • Asen Asenov

    OriginalPaper Pages: 347 - 352