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Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

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Abstract

We present simulations of tunneling current through layers of high-κ dielectrics using the Tsu-Esaki model and the quantum transmitting boundary method (QTBM) to estimate the transmission coefficient. In contrast to transfer-matrix based methods, which suffer from numerical instabilities due to rounding errors, the QTBM is numerically stable even for large stacks and is suitable for implementation in device simulators. The method is used to investigate the tradeoff between conduction band offset and permittivity in alternative high-κ materials.

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Authors and Affiliations

  1. Institut für Mikroelektronik, TU Wien, Gusshausstrasse 27–29, A-1040, Vienna, Austria

    A. Gehring, H. Kosina & S. Selberherr

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  1. A. Gehring
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  2. H. Kosina
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  3. S. Selberherr
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Gehring, A., Kosina, H. & Selberherr, S. Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method. Journal of Computational Electronics 2, 219–223 (2003). https://doi.org/10.1023/B:JCEL.0000011428.85286.7d

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011428.85286.7d

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