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Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool

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Abstract

A microscopic analysis of non-equilibrium phenomena in unipolar quantum devices is presented. In particular, a global Monte Carlo simulation scheme (semiclassical as well as quantum) is employed, which allows us to directly access details of the three-dimensional carrier dynamics, without resorting to phenomenological parameters. Applications to state-of-the-art mid-infrared quantum-cascade lasers and novel far-infrared emitters are discussed. The extremely good agreement between theoretical results and experimental findings demonstrates that our approach is a valid and predictive tool for the understanding of charge transport in these quantum devices.

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Authors and Affiliations

  1. Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129, Torino, Italy

    Rita C. Iotti & Fausto Rossi

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  1. Rita C. Iotti
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  2. Fausto Rossi
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Iotti, R.C., Rossi, F. Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool. Journal of Computational Electronics 2, 191–195 (2003). https://doi.org/10.1023/B:JCEL.0000011423.43254.57

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011423.43254.57

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