Abstract
We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in individual subband states but does not survive in the total current density solution. Both devices are simulated assuming ballistic quantum transport in Si at 300 K.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C.S. Lent, Appl. Phys. Lett., 57, 1678 (1990).
K.-F. Berggren and Z.-L. Ji, Phys. Rev., B47, 6390 (1993).
J.R. Barker and D.K. Ferry, Semicond. Sci. Technol., 13, A135 (1998).
S.E. Laux, A. Kumar, and M.V. Fischetti, IEEE Trans. Nanotechnology, 1, 255 (2002).
S.E. Laux, A. Kumar, and M.V. Fischetti, Tech. Digest, Int. Elec. Devices Meeting, 715 (2002).
S.E. Laux, A. Kumar, and M.V. Fischetti, “Analysis of quantum ballistic transport in ultra-small silicon devices including spacecharge and geometric effects, ” submitted for publication.
M.V. Fischetti, J. Appl. Phys., 83, 270 (1998).
C.S. Lent and D.J. Kirkner, J. Appl. Phys., 67, 6353 (1990).
H. Yu and D.W.L. Sprung, Physics Letters, A183, 413 (1993).
J.R. Barker, Microelectronic Engineering, 63, 223 (2002).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Laux, S., Kumar, A. & Fischetti, M. Does Circulation in Individual Current States Survive in the Total Current Density?. Journal of Computational Electronics 2, 105–108 (2003). https://doi.org/10.1023/B:JCEL.0000011407.24435.d9
Issue Date:
DOI: https://doi.org/10.1023/B:JCEL.0000011407.24435.d9