Abstract
We present an efficient method for the calculation of the ballistic transmission function and current through an arbitrarily shaped, multi-terminal two- or three-dimensional open device. The method is applicable to cases where a ballistic current model is meaningful and charge self-consistency is not relevant, such as quantum dot devices, quantum wires, or interferometer type of structures. As a concrete example, we study the electron escape rate in self-assembled GaAs/InGaAs single quantum dots as a function of applied bias, as measured by photocurrent experiments.
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Sabathil, M., Birner, S., Mamaluy, D. et al. Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots. Journal of Computational Electronics 2, 269–273 (2003). https://doi.org/10.1023/B:JCEL.0000011436.86455.38
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DOI: https://doi.org/10.1023/B:JCEL.0000011436.86455.38