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High Electron Mobility Limited by Remote Impurity Scattering

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Abstract

Mobility of two-dimensional electron gas due to remote impurity scattering is evaluated in modulation-doped AlGaAs/GaAs heterostructures. Observed high electron mobility exceeding 106 cm2/Vs is well explained by the remote impurity scattering, where screening effect is properly taken into account.

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Authors and Affiliations

  1. Department of Electronic Engineering, Osaka University, Suita City, Osaka, 565-0871, Japan

    C. Hamaguchi

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  1. C. Hamaguchi
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Hamaguchi, C. High Electron Mobility Limited by Remote Impurity Scattering. Journal of Computational Electronics 2, 169–171 (2003). https://doi.org/10.1023/B:JCEL.0000011419.08158.3e

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011419.08158.3e

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