Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

Abstract

We have developed a self-consistent quantum mechanical Monte Carlo device simulator that takes electron transport in quantized states into consideration. Two-dimensional quantized states in MOSFET channels are constructed from one-dimensional solutions of the Schrödinger equation at different positions along the channel, and the Schrödinger and Poisson equations are solved self-consistently in terms of electron concentration and electrostatic potential distribution. The channel electron concentration, velocity and drain currents are calculated with the one particle Monte Carlo approach incorporating the intra-valley acoustic phonon and inter-valley phonon scattering mechanisms. This simulator was applied to a 70 nm n-MOSFET transistor, and we found that current mostly flows through the lowest subband and transport is quasi-ballistic near the source junction. To quantitatively estimate the performance of advanced devices, we have developed an inversion carrier transport simulator based on a full-band model. Our simulation method enables us to evaluate device characteristics and analyze the transport properties of ultra-small MOSFETs.