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Mobility Variations in Ultra Small Devices due to Random Discrete Dopants

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Abstract

Scaling of conventional MOSFETs to channel lengths of 20 nm and below will require channel doping in the range of 1019 cm−3. At such doping concentrations ionised impurity scattering may start to dominate over interface roughness scattering within the channel. Additionally, discrete doping variations, both in number and position, will become increasingly important in such small devices resulting in mobility variations from device to device. Such mobility variations will be in addition to the random dopant induced fluctuations due to the electrostatics. Here we report results from 3-D Ensemble Monte Carlo simulations that include ab-initio ionised impurity scattering, and has been developed to investigate mobility variations in small volumes comparable to the channel region of nano-scale MOSFETs.

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Authors and Affiliations

  1. Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, Scotland, UK

    Craig Alexander, Jeremy R. Watling & Asen Asenov

Authors
  1. Craig Alexander
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  2. Jeremy R. Watling
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  3. Asen Asenov
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Alexander, C., Watling, J.R. & Asenov, A. Mobility Variations in Ultra Small Devices due to Random Discrete Dopants. Journal of Computational Electronics 2, 285–289 (2003). https://doi.org/10.1023/B:JCEL.0000011439.27939.e3

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011439.27939.e3

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