Abstract
Transport properties of the two-dimensional hole gas in inversion layer of strained Si/SiGe p-MOSFETs are investigated using the full-band Monte Carlo simulator based on the nonlocal pseudopotential calculation. The hole mobility is significantly enhanced by the strain in the case of Ge content of ≥20%. Moreover, we also present the high-field transport characteristics of 2D holes. In contrast to the low-field mobility, the hole saturation velocity does not significantly enhanced by the strain.
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Nakatsuji, H., Kamakura, Y. & Taniguchi, K. Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs. Journal of Computational Electronics 2, 109–112 (2003). https://doi.org/10.1023/B:JCEL.0000011408.62072.51
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DOI: https://doi.org/10.1023/B:JCEL.0000011408.62072.51