Abstract
Turn-on characteristics of GaAs MESFETs are simulated when the gate and the drain voltages are changed abruptly, and quasi-pulsed I-V curves are derived from them. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is also discussed how the characteristics are influenced by impact ionization of carriers.
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References
S.C. Binari, P.B. Klein, and T.E. Kazior, “Trapping effects in GaN and SiC microwave FETs, ” Proc. IEEE, 90, 1048 (2002).
R.E. Leoni, J.W. Bao, J. Bu, X. Du, M.S. Shirokov, and J.C.M. Hwang, “Mechanism for recoverable power drift in PHEMT's, ” IEEE Trans. Electron Devices, 47, 498 (2000).
U.K. Mishra, P. Parikh, and Y.-F. Wu, “AlGaN/GaN HEMTs-an overview of device operation and applications, ” Proc. IEEE, 90, 1022 (2002).
Y. Mitani, D. Kasai and K. Horio, “Analysis of surface-state and impact-ionization effects on breakdown characteristics and gatelag phenomena in narrowly recessed gate GaAs FETs, ” IEEE Trans. Electron Devices, 50, 285 (2003).
W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, “New and unified model for Schottky barrier and III-V insulator interface states formation, ” J. Vac. Sci. Technol., 16, 1422 (1979).
H.H. Wieder, “Surface Fermi level of III-V compound semiconductor-dielectric interfaces, ” Surface Sci., 132, 390 (1983).
C.L. Li, T.M. Barton, and R.E. Miles, “Avalanche breakdown and surface deep-level trap effects in GaAs MESFET's, ” IEEE Trans. Electron Devices, 40, 811 (1993).
K. Horio and T. Yamada, “Two-dimensional analysis of surfacestate effects on turn-on characteristics in GaAs MESFET's, ” IEEE Trans. Electron Devices, 46, 648 (1999).
G.E. Bulman, V.M. Robbins, K.F. Brennan, K. Hess, and G.E. Stillman, “Experimental determination of impact ionization coefficients in (100) GaAs, ” IEEE Electron Device Lett., EDL-4, 181 (1983).
K. Horio, A. Wakabayashi, and T. Yamada, “Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's, ” IEEE Trans. Electron Devices, 47, 617 (2000).
A.E. Parker and D.E. Root, “Pulse measurements quantify dispersion in PHEMTs, ” in Proc. of ISSSE'98, 444 (1998).
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Kazami, Y., Kasai, D., Mitani, Y. et al. Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization. Journal of Computational Electronics 2, 203–206 (2003). https://doi.org/10.1023/B:JCEL.0000011425.73473.02
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DOI: https://doi.org/10.1023/B:JCEL.0000011425.73473.02