Abstract
The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.
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References
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (John Wiley & sons, New York, 1981).
M. Shur, GaAs Devices and Circuits (Micro-devices Physics Fabrication and Technology, Plenum Press, New York, 1987).
M. Saraniti and S.M. Goodnick, “Hybrid full-band cellular automaton Monte Carlo approach for fast simulation of charge transport in semiconductors”, IEEE Transaction on Electron Devices, 47, 1909, (2000).
M. Saraniti, S.M. Goodnick, and S.J. Wigger in Proceedings of the Third Int. Conf. on Modeling and Simulation of Microsystems (MSM2000, San Diego, CA, 2000).
M.V. Fischetti and S.E. Laux, “Monte Carlo analysis of electron transport in small semiconductor devices including bandstructure and space-charge effects”, Phys. Rev. B, 38, 9721, (1988).
J.R. Chelikowsky and M.L. Cohen, “Nonlocal pseudo potential calculations for the electronic structure of eleven diamond and zinc-blend semiconductors”, Phys. Rev. B, 14, 556, (1976).
K. Kunc and O.H. Nielsen, “Lattice dynamics of Zincblende structure compounds-II: Shell model”, Compu. Phys. Commun., 17, 413, (1979).
M.V. Fischetti, N. Sano, S.E. Laux, and K. Natori, “Fullbandstructure theory of high-filed transport and impact ionization of electrons and holes in Ge, Si, and GaAs”, in Proceedings 1996 Int. Conf. Semiconductor Processes and Devices (Tokyo, Japan, 1996
W. Pötz and P. Vogl, “Theory of optical-phonon deformation potentials in tetrahedral semiconductors”, Phys. Rev. B., 24, 2025, (1981).
M. Saraniti, Y. Hu, S.M. Goodnick, and S.J. Wigger, “Overshoot velocity in ultra-broadband THz studies in GaAs and InP”, Phys. Rev. B, (2002).
A. Leitenstorfer, S. Hunsche, J. Shah, M.C. Nuss, and W.H. Knox, “Femtosecond charge transport in polar semiconductors”, Phys. Rev. Letters, 82, 5140, (1999).
R.W. Hockney and J.W. Eastwood, Computer Simulations Using Particles (Adam Hilger, Bristol, 1988).
S.E. Laux, “Techniques for small-signal analysis of semiconductor devices”, IEEE Transactions on Electron Devices, 32(10), 2028, (1985).
S.S. Pennathur and S.M. Goodnick, “Monte Carlo investigation of three-dimensional effects in sub-micron GaAs MESFETs”, in International Symposium on Compound Semiconductors, San Diego, 18-22 Sept. 1994, (IOP Publishing Lt, San Diego,Sept. 1994), vol. 141, p. 793.
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Branlard, J., Aboud, S., Goodnick, S. et al. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations. Journal of Computational Electronics 2, 213–217 (2003). https://doi.org/10.1023/B:JCEL.0000011427.63034.4e
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DOI: https://doi.org/10.1023/B:JCEL.0000011427.63034.4e