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“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs

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Abstract

In this paper we describe the effects of quantum confinement and ballistic transport in the channel on the dispersion of threshold voltage due to the discrete distribution of dopants. To this aim, a recently developed 3D Poisson-Schrödinger solver is used, along with a 2D solver of ballistic transport. The Schrödinger equation is solved with density functional theory, in the local density approximation. Results on statistically meaningful ensembles of devices show that both ballistic transport and quantum confinement lead to an increase of threshold voltage dispersion.

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Authors and Affiliations

  1. Dipartimento di Ingegneria dell'Informazione, Università degli studi di Pisa, Via Diotisalvi 2, I-56122, Pisa, Italy

    G. Fiori & G. Iannaccone

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  1. G. Fiori
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  2. G. Iannaccone
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Fiori, G., Iannaccone, G. “Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs. Journal of Computational Electronics 2, 123–126 (2003). https://doi.org/10.1023/B:JCEL.0000011411.29037.ce

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011411.29037.ce

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