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Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

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Abstract

Drain-current-gate-voltage characteristics of 13 nm- and 9 nm-gate-length MOSFETs are simulated using a nonequilibrium Green's function (NEGF) technique. The calculated characteristics are compared with those calculated with semi-classical Monte Carlo simulations of two-dimensional (2D-MC) and three-dimensional electron gases (3D-MC). Adopting the same scattering model for NEGF, 2D-MC, and 3D-MC simulations, impact of quantum effects along the confinement direction and along the transport direction is discussed.

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Authors and Affiliations

  1. Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita City, Osaka, 565-0871, Japan

    H. Takeda, N. Mori & C. Hamaguchi

Authors
  1. H. Takeda
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  2. N. Mori
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  3. C. Hamaguchi
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Takeda, H., Mori, N. & Hamaguchi, C. Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs. Journal of Computational Electronics 2, 119–122 (2003). https://doi.org/10.1023/B:JCEL.0000011410.91399.b5

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011410.91399.b5

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