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Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs

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Abstract

Quantum transport properties of nano-scaled SOI-MOSFETs are investigated based on a quantum Monte Carlo (MC) device simulation. The quantum mechanical effects are incorporated in terms of a quantum correction of potential in the well-developed particle MC computational techniques. The ellipsoidal multi-valleys of silicon conduction band are also considered in the simulation. First, the validity of the quantum MC technique is verified by comparing the simulated results with a self-consistent Schrödinger-Poisson solution at thermal equilibrium. Then, we apply the technique to non-equilibrium and quasi-ballistic quantum transport in nano-scaled SOI-MOSFETs.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Kobe University, 1-1, Rokko-dai, Nada-ku, Kobe, 657-8501, Japan

    Hideaki Tsuchiya, Motoki Horino & Tanroku Miyoshi

Authors
  1. Hideaki Tsuchiya
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  2. Motoki Horino
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  3. Tanroku Miyoshi
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Tsuchiya, H., Horino, M. & Miyoshi, T. Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs. Journal of Computational Electronics 2, 91–95 (2003). https://doi.org/10.1023/B:JCEL.0000011405.54654.89

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011405.54654.89

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