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Modeling Hot-Electron Injection in pFET's

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Abstract

We present a first-principles, analytical model of hot-electron injection in pFET's, solving the Boltzmann transport equation in the drain-to-channel depletion region using impact-ionization and phonon scattering operators. We present experimental data of hot-electron injection and impact ionization from silicon IC's and compare to the BTE solution.

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References

  1. Paul Hasler, Andreas Andreou, Chris Diorio, Bradley A. Minch, and Carver Mead, “Impact ionization and hot-electron injection derived consistently from Boltzman transport, ” VLSI Design, 8(14), 455 (1998).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA

    Chris Duffy & Paul Hasler

Authors
  1. Chris Duffy
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  2. Paul Hasler
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Duffy, C., Hasler, P. Modeling Hot-Electron Injection in pFET's. Journal of Computational Electronics 2, 317–322 (2003). https://doi.org/10.1023/B:JCEL.0000011445.99473.5f

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011445.99473.5f

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