Abstract
In ‘atomistic’ device simulation the resolving of discrete charges onto a fine grained simulation mesh can lead to problems. The sharply resolved coulomb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi-Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate artefacts such as the trapping of mobile carriers in sharply resolved Coulomb wells, however they have met with limited success. In this paper we show an alternative approach for handling discrete charges in drift diffusion ‘atomistic’ simulations by properly introducing the related quantum mechanical effects using the Density Gradient formalism. This produces the desired effect of eliminating the trapping of mobile charge in heavily doped regions of the device.
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Roy, G., Brown, A.R., Asenov, A. et al. Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations. Journal of Computational Electronics 2, 323–327 (2003). https://doi.org/10.1023/B:JCEL.0000011446.37111.af
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DOI: https://doi.org/10.1023/B:JCEL.0000011446.37111.af