1. Investigation of the influence of external effects on the behavior of gold impurity in silicon

   • S. Z. Zainabidinov
   • O. O. Mamatkarimov
   • U. A. Tuichiev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 615 - 617

2. Internal friction related to changes in the shape of small inclusions

   • Yu. N. Andreev
   • B. M. Darinskii
   • N. P. Yaroslavtsev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 618 - 620

3. Specifics of MOCVD formation of In_xGa_1−x N inclusions in a GaN matrix

   • I. P. Soshnikov
   • V. V. Lundin
   • D. Gerthsen

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 621 - 625

4. Interband emission of cadmium thiogallate

   • A. I. Machuga
   • V. F. Zhitar’
   • E. D. Arama

   Electronic and Optical Properties of Semiconductors Pages: 626 - 628

5. Redistribution of phosphorus implanted into silicon doped heavily with boron

   • E. G. Tishkovskii
   • V. I. Obodnikov
   • V. G. Seryapin

   Electronic and Optical Properties of Semiconductors Pages: 629 - 633

6. Multiphonon capture of charge carriers by deep-level centers in a depletion region of a semiconductor

   • M. A. Dem’yanenko
   • V. N. Ovsyuk
   • V. V. Shashkin

   Electronic and Optical Properties of Semiconductors Pages: 634 - 640

7. Temperature dependences of electrical properties of n-type PbSe single-crystalline films subjected to α-particle bombardment

   • Ya. P. Salii
   • R. Ya. Salii

   Electronic and Optical Properties of Semiconductors Pages: 641 - 643

8. Charge carrier mobility in n-Cd_xHg_1−x Te crystals subjected to dynamic ultrasonic stressing

   • A. I. Vlasenko
   • Ya. M. Olikh
   • R. K. Savkina

   Electronic and Optical Properties of Semiconductors Pages: 644 - 649

9. On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

   • E. I. Gol’dman
   • A. G. Zhdan
   • G. V. Chucheva

   Electronic and Optical Properties of Semiconductors Pages: 650 - 654

10. Equilibrium energy distribution of localized carriers in disordered semiconductors subjected to an external electric field at low temperature

    • D. V. Nikolaenkov
    • V. I. Arkhipov
    • V. R. Nikitenko

    Electronic and Optical Properties of Semiconductors Pages: 655 - 657

11. Photoelectric phenomena in a-Si:H/p-CuInSe₂ heterostructures

    • Yu. A. Nikolaev
    • V. Yu. Rud’
    • E. I. Terukov

    Electronic and Optical Properties of Semiconductors Pages: 658 - 661

12. Thermoelectric and photoelectric properties of the p-n CuInSe₂/CdS heterostructures obtained by the quasi-equilibrium deposition method

    • M. -R. A. Magomedov
    • Sh. M. Ismailov
    • P. P. Khokhlachev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 662 - 664

13. Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure

    • A. M. Minarskii
    • P. B. Rodin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 665 - 667

14. Special features of generation-recombination processes in the p-n junctions based on HgMnTe

    • L. A. Kosyachenko
    • S. É. Ostapov
    • Weiguo Sun

    Semiconductor Structures, Interfaces, and Surfaces Pages: 668 - 670

15. Influence of SiO₂ protective films on the diffusion of atomic hydrogen during the hydrogenation of epitaxial n-GaAs

    • A. V. Panin
    • N. A. Torkhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 671 - 676

16. Photosensitivity of a-Si:H/n-InSe heterocontacts

    • Yu. A. Nikolaev
    • V. Yu. Rud’
    • E. I. Terukov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 677 - 679

17. Surface magnetoplasma waves in a ferromagnetic semiconductor and their excitation by a magnetic dipole

    • V. L. Fal’ko
    • S. I. Khankina
    • V. M. Yakovenko

    Semiconductor Structures, Interfaces, and Surfaces Pages: 680 - 685

18. Reflection coefficient of a semiconductor superlattice subjected to a magnetic field

    • A. A. Bulgakov
    • O. V. Shramkova

    Low-Dimensional Systems Pages: 686 - 692

19. Low-temperature photoluminescence and X-ray diffractometry study of In_xGa_1−x As quantum wells

    • S. V. Evstigneev
    • R. M. Imamov
    • D. S. Shipitsin

    Low-Dimensional Systes Pages: 693 - 699

20. Self-ordered microcavities embedded in ultrashallow silicon p-n junctions

    • N. T. Bagraev
    • A. D. Buravlev
    • S. A. Rykov

    Low-Dimensional Systems Pages: 700 - 711

21. Ballistic conductance of a quantum wire at finite temperatures

    • N. T. Bagraev
    • V. K. Ivanov
    • I. A. Shelykh

    Low-Dimensional Systems Pages: 712 - 716

22. Kinetics of light-induced degradation in a-Si:H films investigated by computer simulation

    • M. N. Meytin
    • M. Zeman
    • J. W. Metselaar

    Morphous, Vitreous, and Porous Semiconductors Pages: 717 - 722

23. The staebler-wronski effect and temperature dependences of photoconductivity in p-type a-Si:H

    • S. V. Kuznetsov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 723 - 727

24. Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy water

    • B. V. Kamenev
    • E. A. Konstantinova
    • V. Yu. Timoshenko

    Amorphous, Vitreous, and Porous Semiconductors Pages: 728 - 731

25. Optical and electrical properties of porous gallium arsenide

    • N. S. Averkiev
    • L. P. Kazakova
    • N. N. Smirnova

    Amorphous, Vitreous, and Porous Semiconductors Pages: 732 - 736

26. Effect of nanocrystalline inclusions on the photosensitivity of amorphous hydrogenated silicon films

    • O. A. Golikova
    • M. M. Kazanin

    Amorphous, Vitreous, and Porous Semiconductors Pages: 737 - 740