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Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy water

  • Amorphous, Vitreous, and Porous Semiconductors
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Abstract

The methods of infrared spectroscopy, electron spin resonance, and photoluminescence were used to study the porous-silicon layers formed by electrochemical treatment of Si in an HF: D2O solution. In contrast with the samples prepared in a conventional electrolyte (HF: H2O), a steady increase in the photoluminescence intensity in the course of routine oxidation of the sample was observed, with the hydrogen coverage of the silicon-skeleton surface retained. A mechanism for anomalous oxidation of the layers of porous silicon obtained in a mixture of HF and heavy water is suggested.

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Authors and Affiliations

  1. Moscow State University, Vorob’evy gory, Moscow, 119899, Russia

    B. V. Kamenev, E. A. Konstantinova, P. K. Kashkarov & V. Yu. Timoshenko

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  1. B. V. Kamenev
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  2. E. A. Konstantinova
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  3. P. K. Kashkarov
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  4. V. Yu. Timoshenko
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 753–756.

Original Russian Text Copyright © 2000 by Kamenev, Konstantinova, Kashkarov, Timoshenko.

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Kamenev, B.V., Konstantinova, E.A., Kashkarov, P.K. et al. Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy water. Semiconductors 34, 728–731 (2000). https://doi.org/10.1134/1.1188062

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  • DOI: https://doi.org/10.1134/1.1188062

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