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Photosensitivity of a-Si:H/n-InSe heterocontacts

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Rectifying photosensitive structures were obtained for the first time by bringing the surfaces of thin films of amorphous hydrogenated silicon deposited onto the silica-glass substrates into direct optical contact with the InSe natural-cleavage surface. Spectral dependences of the quantum efficiency of the obtained heterocontacts were studied, and the prospects for the use of the new a-Si:H/n-InSe heterocontacts in solar cells were assessed.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    Yu. A. Nikolaev, Yu. V. Rud’ & E. I. Terukov

  2. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

Authors
  1. Yu. A. Nikolaev
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  2. V. Yu. Rud’
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  3. Yu. V. Rud’
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  4. E. I. Terukov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 704–706.

Original Russian Text Copyright © 2000 by Nikolaev, V. Rud’, Yu. Rud’, Terukov.

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Nikolaev, Y.A., Rud’, V.Y., Rud’, Y.V. et al. Photosensitivity of a-Si:H/n-InSe heterocontacts. Semiconductors 34, 677–679 (2000). https://doi.org/10.1134/1.1188054

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  • DOI: https://doi.org/10.1134/1.1188054

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