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Special features of generation-recombination processes in the p-n junctions based on HgMnTe

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Abstract

New experimental data on the charge transport in p-n junctions based on Hg1−x MnxTe (x≈0.11) are reported. The experimental I-V characteristics are interpreted in terms of the Sah-Noyce-Shockley theory with allowance made for special features of recombination of the charge carriers in a narrow-gap semiconductor.

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Authors and Affiliations

  1. Chernovtsy University, Chernovtsy, 274012, Ukraine

    L. A. Kosyachenko & S. É. Ostapov

  2. Luoyang Optoelectronics Institute, PO Box 030, Luoyang, Henan, 471009, People’s Republic of China

    Weiguo Sun

Authors
  1. L. A. Kosyachenko
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  2. S. É. Ostapov
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  3. Weiguo Sun
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 695–697.

Original Russian Text Copyright © 2000 by Kosyachenko, Ostapov, Sun Weiguo.

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Kosyachenko, L.A., Ostapov, S.É. & Sun, W. Special features of generation-recombination processes in the p-n junctions based on HgMnTe. Semiconductors 34, 668–670 (2000). https://doi.org/10.1134/1.1188052

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  • DOI: https://doi.org/10.1134/1.1188052

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