Abstract
The structures grown by molecular-beam epitaxy with InxGa1−x As quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 719–725.
Original Russian Text Copyright © 2000 by Evstigneev, Imamov, Lomov, Sadof’ev, Khabarov, Chuev, Shipitsin.
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Evstigneev, S.V., Imamov, R.M., Lomov, A.A. et al. Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−x As quantum wells. Semiconductors 34, 693–699 (2000). https://doi.org/10.1134/1.1188057
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DOI: https://doi.org/10.1134/1.1188057