Abstract
The effect of a low-energy α-particle bombardment (5.5 MeV) on the electrical properties of n-PbSe is studied. It is found that the bombardment increases the carrier density. The samples with an initial electron concentration lower than 1017 cm−3 change their properties after an α-particle dose of up to approximately 1012 cm−2. The change is not steady for the samples with higher initial carrier densities. The mobilities of charge carriers decrease in samples with a lower initial carrier density and do not change in those with a high carrier density.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 667–669.
Original Russian Text Copyright © 2000 by Ya. Sali\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), R. Sali\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).
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Salii, Y.P., Salii, R.Y. Temperature dependences of electrical properties of n-type PbSe single-crystalline films subjected to α-particle bombardment. Semiconductors 34, 641–643 (2000). https://doi.org/10.1134/1.1188045
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DOI: https://doi.org/10.1134/1.1188045