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Equilibrium energy distribution of localized carriers in disordered semiconductors subjected to an external electric field at low temperature

  • Electronic and Optical Properties of Semiconductors
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Abstract

An equilibrium energy distribution of charge carriers is possible in the 3D case in disordered semiconductors with a sufficiently rapidly decreasing density of localized states at low temperatures when the contribution of thermally activated hops of charge carriers to the hopping transport is negligible. A Boltzmann exponential with a field-dependent effective temperature describes the asymptotic behavior of this distribution.

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Authors and Affiliations

  1. Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow, 125080, Russia

    D. V. Nikolaenkov, V. I. Arkhipov & V. R. Nikitenko

Authors
  1. D. V. Nikolaenkov
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  2. V. I. Arkhipov
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  3. V. R. Nikitenko
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 682–684.

Original Russian Text Copyright © 2000 by Nikolaenkov, Arkhipov, Nikitenko.

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Nikolaenkov, D.V., Arkhipov, V.I. & Nikitenko, V.R. Equilibrium energy distribution of localized carriers in disordered semiconductors subjected to an external electric field at low temperature. Semiconductors 34, 655–657 (2000). https://doi.org/10.1134/1.1188048

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  • DOI: https://doi.org/10.1134/1.1188048

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