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Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Through deposition of CuInSe2 films on CdS substrates in a quasi-closed-circuit “hot-wall” reactor, p-n CuInSe2/CdS heterostructures were obtained. The thermoelectric power, current-voltage characteristics, and photosensitivity spectra of the structures were investigated.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003, Dagestan, Russia

    M. -R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova & P. P. Khokhlachev

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  1. M. -R. A. Magomedov
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  2. Sh. M. Ismailov
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  3. Dzh. Kh. Magomedova
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  4. P. P. Khokhlachev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 689–691.

Original Russian Text Copyright © 2000 by Magomedov, Ismailov, Magomedova, Khokhlachev.

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Magomedov, M.R.A., Ismailov, S.M., Magomedova, D.K. et al. Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method. Semiconductors 34, 662–664 (2000). https://doi.org/10.1134/1.1188050

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  • DOI: https://doi.org/10.1134/1.1188050

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