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Reflection coefficient of a semiconductor superlattice subjected to a magnetic field

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Abstract

Propagation of magnetoplasma waves in a structure formed by periodically alternating semiconductor and dielectric layers is studied for the case where an external magnetic field is applied parallel to the layers; the waves traveling in the plane normal to the field are considered. Dispersion characteristics are calculated with the finiteness of the speed of light accounted for, and the features of the structure reflectivity are analyzed. It is demonstrated that the physical parameters and thicknesses of the layers composing the superlattice can be obtained from the frequency, angle of incidence, and magnetic-field dependences of the reflection coefficient.

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Authors and Affiliations

  1. Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine, Khar’kov, 310085, Ukraine

    A. A. Bulgakov & O. V. Shramkova

Authors
  1. A. A. Bulgakov
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  2. O. V. Shramkova
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 712–718.

Original Russian Text Copyright © 2000 by Bulgakov, Shramkova.

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Bulgakov, A.A., Shramkova, O.V. Reflection coefficient of a semiconductor superlattice subjected to a magnetic field. Semiconductors 34, 686–692 (2000). https://doi.org/10.1134/1.1188056

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