Abstract
Multiphonon field-assisted thermal capture of thermally equilibrium charge carriers by deep-level centers located in a depletion region of a semiconductor is analyzed. It is shown that, in the case of strong electron-phonon coupling (SEPC), the multiphonon capture with preliminary tunneling of an electron through a potential barrier in the depletion region occurs with a lower rate as compared to the direct multiphonon capture in the electrically neutral bulk of the semiconductor, whereas, in the case of weak electron-phonon coupling (WEPC), the capture rate in the depletion region of a semiconductor may exceed that in the electrically neutral bulk by several orders of magnitude. The results of experimental study of capture processes in AlGaAs doped with silicon indicate that electron-phonon coupling is strong in DX centers.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 660–666.
Original Russian Text Copyright © 2000 by Dem’yanenko, Ovsyuk, Shashkin.
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Dem’yanenko, M.A., Ovsyuk, V.N. & Shashkin, V.V. Multiphonon capture of charge carriers by deep-level centers in a depletion region of a semiconductor. Semiconductors 34, 634–640 (2000). https://doi.org/10.1134/1.1188044
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DOI: https://doi.org/10.1134/1.1188044