Semiconductors is a journal that сovers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, devices based on semiconductors and nanostructures including lasers, semiconductor surface physics, and structural defects in semiconductors.
Semiconductors is a peer reviewed journal. We use a single blind peer review format. Our team of reviewers includes over 140 experts from 7 countries (Russia, Ukraine, Belorussia, Germany, France, UK, USA). The average period from submission to first decision in 2018 was 14 days, and that from first decision to acceptance was 21 days. The rejection rate for submitted manuscripts in 2018 was 18%. The final decision on the acceptance of an article for publication is made by the Editor-in-Chief or the Deputy Editor-in-Chief.
Any invited reviewer who feels unqualified or unable to review the manuscript due to the conflict of interests should promptly notify the editors and decline the invitation. Reviewers should formulate their statements clearly in a sound and reasoned way so that authors can use reviewer’s arguments to improve the manuscript. Personal criticism of the authors must be avoided. Reviewers should indicate in a review (i) any relevant published work that has not been cited by the authors, (ii) anything that has been reported in previous publications and not given appropriate reference or citation, (ii) any substantial similarity or overlap with any other manuscript (published or unpublished) of which they have personal knowledge.
SURFACES, INTERFACES, AND THIN FILMS
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
- Journal Title
- Volume 31 / 1997 - Volume 53 / 2019
- Print ISSN
- Online ISSN
- Pleiades Publishing
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