ISSN: 1063-7826 (Print) 1090-6479 (Online)


Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.


Semiconductors is a peer reviewed journal. We use a single blind peer review format. Our team of reviewers includes over 140 reviewers, both internal and external (80%), from 7 countries (Russia, Ukraine, Belorussia, Germany, France, UK, USA). The average period from submission to first decision in 2017 was 14 days, and that from first decision to acceptance was 21 days. The final decision on the acceptance of an article for publication is made by the Editor-in-Chief or the Deputy Editor-in-Chief.

Any invited reviewer who feels unqualified or unable to review the manuscript due to the conflict of interests should promptly notify the editors and decline the invitation. Reviewers should formulate their statements clearly in a sound and reasoned way so that authors can use reviewer’s arguments to improve the manuscript. Personal criticism of the authors must be avoided. Reviewers should indicate in a review (i) any relevant published work that has not been cited by the authors, (ii) anything that has been reported in previous publications and not given appropriate reference or citation, (ii) any substantial similarity or overlap with any other manuscript (published or unpublished) of which they have personal knowledge.

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Latest Articles

  1. No Access

    Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

    Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure

    V. Ya. Kogai, G. M. Mikheev (August 2018)

  2. No Access

    Electronic Properties of Semiconductors

    Electronic Processes in CdIn2Te4 Crystals

    O. G. Grushka, S. M. Chupyra, S. V. Bilichuk, O. A. Parfenyuk (August 2018)

  3. No Access

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

    Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    S. Zainabidinov, I. G. Tursunov, O. Khimmatkulov (August 2018)