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Internal friction related to changes in the shape of small inclusions

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Sizes of the second-phase microinclusions typical of III-V, II-VI, and IV-VI semiconductor compounds and their derivatives were theoretically estimated. A formula relating the temperature shift of the internal-friction peak caused by the inclusion-shape changes under the effect of sign-alternating elastic stresses to linear inclusion dimensions was derived. The results were confirmed by data on the low-frequency internal friction in SnTe.

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References

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    Yu. N. Andreev, B. M. Darinskii & N. P. Yaroslavtsev

  2. St. Petersburg State Electrotechnical University, St. Petersburg, 197376, Russia

    V. A. Moshnikov

  3. Voronezh State Technological Academy, pr. Revolyutsii 19, Voronezh, 394017, Russia

    D. S. Saiko

Authors
  1. Yu. N. Andreev
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  2. B. M. Darinskii
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  3. V. A. Moshnikov
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  4. D. S. Saiko
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  5. N. P. Yaroslavtsev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 644–646.

Original Russian Text Copyright © 2000 by Andreev, Darinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Moshnikov, Sa\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)ko, Yaroslavtsev.

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Andreev, Y.N., Darinskii, B.M., Moshnikov, V.A. et al. Internal friction related to changes in the shape of small inclusions. Semiconductors 34, 618–620 (2000). https://doi.org/10.1134/1.1188040

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  • DOI: https://doi.org/10.1134/1.1188040

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